P Erformance C Omparison of 4 T , 3 T a Nd 3 T 1 D Dram C Ell D Esign on 32 Nm

In this paper average power consumption of dram cell designs have been analyzed for the nanometer scale memories. Many modern processors use dram for on chip data and program memory. The major contributor of power in dram is the off state leakage current. Improving the power efficiency of a dram cell is critical for the improvement in average power consumption of the overall system. 3T dram cell, 4T dram and 3T1D DRAM cells are designed with the schematic design technique and their average power consumption are compared using TANNER EDA tool .average power consumption, write access time, read access time and retention time of 4T, 3T dram and 3T1D DRAM cell are simulated and compared on 32 nm technology.